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| ST330CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 650 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AC (B-PUK) * High profile hockey PUK TO-200AC (B-PUK) * Lead (Pb)-free * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 650 A * DC motor controls * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) TEST CONDITIONS VALUES 650 Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz 55 1230 25 9000 9420 405 370 400 to 2000 Typical 100 - 40 to 125 UNITS A C A C A ITSM I2 t VDRM/VRRM tq TJ kA2s V s C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 08 12 ST330C..L 14 16 18 20 VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA V 400 800 1200 1400 1600 1800 2000 500 900 1300 1500 1700 1900 2100 50 Document Number: 94408 Revision: 16-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST330CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 650 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 650 (314) 55 (75) 1230 9000 9420 7570 Sinusoidal half wave, initial TJ = TJ maximum 7920 405 370 287 262 4050 0.91 0.93 0.57 0.57 1.90 600 1000 kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 1730 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 1000 1.0 s 100 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94408 Revision: 16-Oct-08 ST330CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 650 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 2.5 1.8 1.1 10 VALUES TYP. MAX. UNITS 10.0 2.0 3.0 20 5.0 200 3.0 - W A V mA V mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.11 0.06 0.011 0.005 9800 (1000) 250 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style RthC-hs TO-200AC (B-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.012 0.014 0.018 0.026 0.045 DOUBLE SIDE 0.010 0.015 0.018 0.027 0.046 RECTANGULAR CONDUCTION SINGLE SIDE 0.008 0.014 0.019 0.027 0.046 DOUBLE SIDE 0.008 0.014 0.019 0.028 0.046 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94408 Revision: 16-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST330CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 650 A Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 400 600 800 1000 1200 1400 Average On-state Current (A) 30 60 90 120 180 DC Conduction Period Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 S 330C..L Series T (S ingle S Cooled) ide RthJ-hs (DC) = 0.11 K/ W S 330C..L S T eries (Double S Cooled) ide R thJ-hs (DC) = 0.05 K/ W Conduction Angle 80 70 60 50 40 30 0 50 100 150 200 250 300 350 400 450 Average On-state Current (A) 30 60 90 120 180 Fig. 1 - Current Ratings Characteristics Maximum Allowable Heats T ink emperature (C) Fig. 4 - Current Ratings Characteristics 120 110 100 90 80 70 60 50 40 30 20 0 200 30 S 330C..L S T eries (S ingle S ide Cooled) R thJ-hs (DC) = 0.11 K/ W Maximum Average On-s tate Power Loss (W) 130 1600 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 Average On-state Current (A) Conduc tion Angle 180 120 90 60 30 RMS Limit Conduction Period 60 90 120 180 400 DC 600 800 S 330C..L S T eries T = 125C J Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 30 Maximum Average On-state Power Los (W) s S 330C..L S T eries (Double S Cooled) ide RthJ-hs (DC) = 0.05 K/ W 2200 2000 1800 1600 1400 DC 180 120 90 60 30 Conduction Angle 1200 RMSLimit 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Average On-s tate Current (A) S 330C..L S T eries TJ = 125C Conduction Period 60 90 120 180 400 600 800 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94408 Revision: 16-Oct-08 ST330CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 650 A Peak Half S Wave On-state Current (A) ine 8000 7500 7000 6500 6000 5500 5000 4500 4000 3500 1 10 100 Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N) Peak Half S Wave On-state Current (A) ine At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 8500 Maximum Non Repetitive S urge Current Vers Pulse T us rain Duration. Control 8000 Of Conduction May Not Be Maintained. Initial T = 125C J 7500 No Voltage Reapplied Rated VRRM R eapplied 7000 6500 6000 5500 5000 4500 4000 S 330C..L S T eries 0.1 Puls T e rain Duration (s) 1 S 330C..L S T eries 3500 0.01 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 Instantaneous On-state Current (A) Tj = 125 C 1000 Tj = 25 C ST330C..L Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics T ransient T hermal Impedance ZthJ-hs (K/ W) 1 S teady S tate Value RthJ-hs = 0.11 K/ W (S ingle S ide Cooled) 0.1 RthJ-hs = 0.05 K/ W (Double S ide Cooled) (DC Operation) 0.01 S 330C..L S T eries 0.001 0.001 0.01 0.1 S quare Wave Puls Duration (s) e 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94408 Revision: 16-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST330CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 650 A 100 Instantaneous Gate Voltage (V) R ectangular gate pulse a) R ecommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S 330C..L S T eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 33 2 - 0 3 C 4 16 5 L 6 1 7 8 PbF 9 Thyristor Essential part number 0 = Converter grade C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) L = PUK case TO-200AC (B-PUK) 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 9 - Critical dV/dt: Lead (Pb)-free None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95076 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94408 Revision: 16-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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